Investigation of pulsed laser annealing (PLA) and rapid thermal annealing (RTA) of CIGS films and solar cells

Authors :: Omar Manasreh
Valentin Craciun
Oscar D. Crisalle
J. M. Howard
Woo Kyoung Kim
S. Yoon
J. Venturini
Xuege Wang
S.S. Li
Timothy J. Anderson
Source :: Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005..
Publication Year :: 2005
Publisher :: IEEE, 2005.
Abstract: Studies of the effect of pulsed laser annealing (PLA) and rapid thermal annealing (RTA) on Cu(In,Ga)Se/sub 2/ (CIGS) films and devices under various annealing conditions are reported in this paper. Several characterizations were carried out before and after each annealing. The results show that both of these two techniques could positively benefit the CIGS film properties and device performance.

Subjects :: Pulsed laser
Semiconductor thin films
Materials science
Ternary semiconductors
business.industry
Annealing (metallurgy)
Optoelectronics
Rapid thermal annealing
business
Copper indium gallium selenide solar cells

Database :: OpenAIRE
Journal :: Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.
Accession number :: edsair.doi...........9fd11d2f8740ad447959fade888eb9e5
Full Text :: https://doi.org/10.1109/pvsc.2005.1488152

Full Text Access

Tools