LEGO Process for Mixed Power Applications: Fabrication at Low Cost of Localized Thick SOI Layers

In this paper, we present the low cost fabrication process of a partial and thick silicon-on-insulator (SOI) substrate for mixed power integration (low and high voltage devices on the same chip). It is based on the Lateral Epitaxial Growth over Oxide process (LEGO). It is shown that the proposed process provides a crystalline quality compatible with a CMOS technology and high voltages devices.