High-NA ArF lithography for 70-nm technologies

Complementary phase shift mask (c:PSM) is one of the most promising resolution enhancement techniques (RET) to extend low k1 optical lithography. Nonetheless binary intensity mask (BIM) imaged with 193 nm wavelength at high numerical aperture (0.75) off-axis illumination (OAI) might still be used for nested through isolated feature sizes as small as 70 nm. We compare the feasibility of using c:PSM and BIM for 70nm generation technologies. Experimental results of high NA imaged BIM and c:PSM are presented.