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New fast turn-on speed SCR device for electrostatic discharge protection
- Source :
- Microelectronics Reliability. 66:38-45
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- A new SCR with the variation lateral base doping (VLBD) structure (VSCR) is proposed to improve the turn-on speed for electrostatic discharge (ESD) protection. The turn-on speed of the SCR was determined mainly by the base transit time of the parasitic p-n-p and n-p-n transistors of the SCR, and the VLBD structure can reduce the base transit time of the bipolar transistors to improve the turn-on speed of the SCR. The experimental and simulation results show that the turn-on time of the VSCRs with the VLBD structure is 12% less than that of the MLSCR with the traditional uniform base doping without adding extra process masks and increasing the chip area.
- Subjects :
- Engineering
Transit time
02 engineering and technology
01 natural sciences
law.invention
law
0103 physical sciences
Turn (geometry)
0202 electrical engineering, electronic engineering, information engineering
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
010302 applied physics
Electrostatic discharge
business.industry
020208 electrical & electronic engineering
Doping
Bipolar junction transistor
Transistor
Electrical engineering
Condensed Matter Physics
Chip
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Electrostatic discharge protection
Optoelectronics
business
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 66
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........9f7aee693a02e182788b3dcb484e8e15