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Wafer Level Back to Back Hybrid Bonding for Multiple Wafer Stacking
- Source :
- 2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC).
- Publication Year :
- 2020
- Publisher :
- IEEE, 2020.
-
Abstract
- This paper describes the demonstration of a 4-layer wafer stack using a combination of face-to-face and back-to-back, wafer-to-wafer hybrid bonding process. Details of process flow, process characterization and challenges in multi-layer wafer stacking are included in this paper. Wafer warpage of different pattern density is simulated with 3D finite element analysis (FEA) model. Wafer bow results match with low warpage results of simulation. 4-layer wafer was stacked together without separation. The process development and improvement carries out.
- Subjects :
- 010302 applied physics
Materials science
Silicon
business.industry
Semiconductor device modeling
Stacking
Process (computing)
chemistry.chemical_element
ComputerApplications_COMPUTERSINOTHERSYSTEMS
Hardware_PERFORMANCEANDRELIABILITY
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Wafer stacking
Finite element method
chemistry
Stack (abstract data type)
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Wafer
0210 nano-technology
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC)
- Accession number :
- edsair.doi...........9f5abb2af60d55abf7d5f030fdafa24a
- Full Text :
- https://doi.org/10.1109/eptc50525.2020.9315154