Back to Search Start Over

CMOS device optimization for mixed-signal technologies

Authors :
Jeroen Croon
E. Augendre
F.R.J. Huisman
R.M.D.A. Velghe
K.N. Sreerambhatla
Youri Victorovitch Ponomarev
L.P. Bellefroid
M.N. Webster
M. Da Rold
E. Seevinck
Ray Duffy
M.J.B. Bolt
R.F.M. Roes
A.T.A. Zegers-van Duijnhoven
R. Surdeanu
M. Vertregt
Hans Tuinhout
A.J. Moonen
Peter Stolk
N.K.J. van Winkelhoff
C.J.J. Dachs
Source :
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
Publication Year :
2002
Publisher :
IEEE, 2002.

Abstract

This paper studies the suitability of CMOS device technology for mixed-signal applications. The currently proposed scaling scenario's for CMOS technologies lead to strong degradation of analog transistor performance. As a result the combined optimization of digital and analog devices for system-on-a-chip applications will require increasingly elaborate process modifications. New device solutions such as metal gate integration and asymmetric (source-side-only) workfunction modification offer process options for future mixed-signal CMOS applications.

Details

Database :
OpenAIRE
Journal :
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
Accession number :
edsair.doi...........9f377a49c742ede27965176cd3b9e48c
Full Text :
https://doi.org/10.1109/iedm.2001.979469