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Defect-modulated thermal transport behavior of BAs under high pressure

Authors :
Yongjian Zhou
Wen-Pin Hsieh
Chao-Chih Chen
Xianghai Meng
Fei Tian
Zhifeng Ren
Li Shi
Jung-Fu Lin
Yaguo Wang
Source :
Applied Physics Letters. 121:121902
Publication Year :
2022
Publisher :
AIP Publishing, 2022.

Abstract

Boron arsenide (BAs) is a covalent semiconductor with a theoretical intrinsic thermal conductivity approaching 1300 W/m K. The existence of defects not only limits the thermal conductivity of BAs significantly but also changes its pressure-dependent thermal transport behavior. Using both picosecond transient thermoreflectance and femtosecond time-domain thermoreflectance techniques, we observed a non-monotonic dependence of thermal conductivity on pressure. This trend is not caused by the pressure-modulated phonon–phonon scattering, which was predicted to only change the thermal conductivity by 10%–20%, but a result of several competing effects, including defect–phonon scattering and modification of structural defects under high pressure. Our findings reveal the complexity of the defect-modulated thermal behavior under pressure.

Details

ISSN :
10773118 and 00036951
Volume :
121
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........9eb987b45546b0163da090f0300593f0
Full Text :
https://doi.org/10.1063/5.0113007