RHEED investigation of the formation process of InAs quantum dots on (100) InAlAs/InP for application to photonic devices in the 1.55μm range

MLA

Takafumi Yao, et al. “RHEED Investigation of the Formation Process of InAs Quantum Dots on (100) InAlAs/InP for Application to Photonic Devices in the 1.55μm Range.” Journal of Crystal Growth, vol. 229, July 2001, pp. 142–46. EBSCOhost, https://doi.org/10.1016/s0022-0248(01)01109-5.

APA

Takafumi Yao, Bon Heun Koo, Hisao Makino, Takashi Hanada, & J.H. Chang. (2001). RHEED investigation of the formation process of InAs quantum dots on (100) InAlAs/InP for application to photonic devices in the 1.55μm range. Journal of Crystal Growth, 229, 142–146. https://doi.org/10.1016/s0022-0248(01)01109-5

Chicago

Takafumi Yao, Bon Heun Koo, Hisao Makino, Takashi Hanada, and J.H. Chang. 2001. “RHEED Investigation of the Formation Process of InAs Quantum Dots on (100) InAlAs/InP for Application to Photonic Devices in the 1.55μm Range.” Journal of Crystal Growth 229 (July): 142–46. doi:10.1016/s0022-0248(01)01109-5.