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HVPE GaN for high power electronic Schottky diodes
- Source :
- Solid-State Electronics. 79:238-243
- Publication Year :
- 2013
- Publisher :
- Elsevier BV, 2013.
-
Abstract
- Hydride vapor phase epitaxy (HVPE) grown GaN was evaluated for high power Schottky diodes (SDs) because it contains much less carbon and grows much more rapidly than other typical growth methods. The results are encouraging for applications
- Subjects :
- Materials science
business.industry
Hydride
Schottky diode
chemistry.chemical_element
Condensed Matter Physics
Epitaxy
Crystallographic defect
Electronic, Optical and Magnetic Materials
chemistry
Materials Chemistry
Optoelectronics
Figure of merit
Wafer
Electrical and Electronic Engineering
business
Carbon
Voltage
Subjects
Details
- ISSN :
- 00381101
- Volume :
- 79
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi...........9e17e37230809186419157ef0c617bdd