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Structural perfection and the distribution of impurities in magnetic semiconductor nanoheterosystems based on GaAs
- Source :
- Bulletin of the Russian Academy of Sciences: Physics. 78:6-8
- Publication Year :
- 2014
- Publisher :
- Allerton Press, 2014.
-
Abstract
- A comprehensive study of the crystal structure and distribution of impurities in GaAs nanoheterosystems containing InGaAs quantum wells and delta ‹Mn›-doped layers is performed. High-resolution transmission electronmicroscopy, energy dispersive spectroscopy, and X-ray diffraction are used in particular. It is shown that our technique allows growing structures with embedded delta layers of magnetic impurities epitaxially.
- Subjects :
- Diffraction
Materials science
Condensed matter physics
Energy-dispersive X-ray spectroscopy
General Physics and Astronomy
Magnetic semiconductor
Crystal structure
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Epitaxy
Condensed Matter::Materials Science
Distribution (mathematics)
Impurity
Condensed Matter::Superconductivity
Quantum well
Subjects
Details
- ISSN :
- 19349432 and 10628738
- Volume :
- 78
- Database :
- OpenAIRE
- Journal :
- Bulletin of the Russian Academy of Sciences: Physics
- Accession number :
- edsair.doi...........9ddecb039f07fe4f8b941a230cfd4e9b