Observation of self-assembled InAs/GaAs quantum dot structure with temperature-dependent photoluminescence and measurement of electrical characteristics

Self-assembled quantum dot has been realized in different optical-electric material systems and different growth techniques using Stranski-Krastanow growth mode [1]. The optical properties of quantum dots are of physical interest due to the experimental investigation. The theoretical predictions of quantum dot device have been well verified [2]. In the article, we studied the temperature dependent electrical and optical properties [2,3] of quantum dot under normal incidence. From the measurement results, we found the three-dimensional confinement of QD structure and the inter- confined state [4-6].