A Sequential Tunneling Model for Calculating Gate Leakage Current of Nanometer Metal-Oxide-Semiconductor Transistor

Subjects

Subjects :

Materials science
business.industry
Transistor
Gate leakage current
Electronic, Optical and Magnetic Materials
law.invention
Metal
Oxide semiconductor
law
visual_art
visual_art.visual_art_medium
Optoelectronics
Nanometre
Electrical and Electronic Engineering
business
Quantum tunnelling

Details

ISSN :

1555130X

Volume :

13

Database :

OpenAIRE

Journal :

Journal of Nanoelectronics and Optoelectronics

Accession number :

edsair.doi...........9d71b36f62e3bd753cd29660869ec3f1