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Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs

Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs

Authors :
Liangxi Huang
Hui Feng
Yangyuan Wang
Xing Zhang
Fei Tan
Ru Huang
Xia An
Weikang Wu
Jiewen Fan
Source :
Semiconductor Science and Technology. 29:015010
Publication Year :
2013
Publisher :
IOP Publishing, 2013.

Abstract

This paper studies the total ionizing dose (TID) and single event effect (SEE) in quasi-SOI nMOSFETs for the first time. After exposure to gamma rays, the off-state leakage current (Ioff) of a quasi-SOI device increases with the accumulating TID, and the on-state bias configuration is shown to be the worst-case bias configuration during irradiation. Although an additional TID-sensitive region is introduced by the unique structure of the quasi-SOI device, the influence of positive charge trapped in L-type oxide layers on the degradation of device performance is neglectable. Since the TID-induced leakage path in the quasi-SOI device is greatly reduced due to the isolation of L-type oxide layers, the TID-induced Ioff degradation in the quasi-SOI device is greatly suppressed. In addition, 3D simulation is performed to investigate the SEE of the quasi-SOI device. The full-width at half-maximum (FWHM) of worst-case drain current transient and collected charges of the quasi-SOI device after single-ion-striking is smaller than in a bulk Si device, indicating that the quasi-SOI device inherits the advantage of an SOI device in single event transient immunity. Therefore, the quasi-SOI device, which has improved electrical properties and radiation-hardened characteristics for both TID and SEE, can be considered as one of the promising candidates for space applications.

Details

ISSN :
13616641 and 02681242
Volume :
29
Database :
OpenAIRE
Journal :
Semiconductor Science and Technology
Accession number :
edsair.doi...........9d6d13d20d5f733d0ac1734f95f009a4
Full Text :
https://doi.org/10.1088/0268-1242/29/1/015010