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Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs
Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs
- Source :
- Semiconductor Science and Technology. 29:015010
- Publication Year :
- 2013
- Publisher :
- IOP Publishing, 2013.
-
Abstract
- This paper studies the total ionizing dose (TID) and single event effect (SEE) in quasi-SOI nMOSFETs for the first time. After exposure to gamma rays, the off-state leakage current (Ioff) of a quasi-SOI device increases with the accumulating TID, and the on-state bias configuration is shown to be the worst-case bias configuration during irradiation. Although an additional TID-sensitive region is introduced by the unique structure of the quasi-SOI device, the influence of positive charge trapped in L-type oxide layers on the degradation of device performance is neglectable. Since the TID-induced leakage path in the quasi-SOI device is greatly reduced due to the isolation of L-type oxide layers, the TID-induced Ioff degradation in the quasi-SOI device is greatly suppressed. In addition, 3D simulation is performed to investigate the SEE of the quasi-SOI device. The full-width at half-maximum (FWHM) of worst-case drain current transient and collected charges of the quasi-SOI device after single-ion-striking is smaller than in a bulk Si device, indicating that the quasi-SOI device inherits the advantage of an SOI device in single event transient immunity. Therefore, the quasi-SOI device, which has improved electrical properties and radiation-hardened characteristics for both TID and SEE, can be considered as one of the promising candidates for space applications.
- Subjects :
- Materials science
business.industry
Gamma ray
Silicon on insulator
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Ion
Full width at half maximum
Absorbed dose
Materials Chemistry
Optoelectronics
Irradiation
Electrical and Electronic Engineering
Electric current
business
Leakage (electronics)
Subjects
Details
- ISSN :
- 13616641 and 02681242
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- Semiconductor Science and Technology
- Accession number :
- edsair.doi...........9d6d13d20d5f733d0ac1734f95f009a4
- Full Text :
- https://doi.org/10.1088/0268-1242/29/1/015010