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Homogeneous transparent conductive ZnO:Ga by ALD for large LED wafers
- Source :
- Applied Surface Science. 379:304-308
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- Highly conductive and uniform Ga doped ZnO (GZO) films were prepared by atomic layer deposition (ALD) as transparent conductive layers for InGaN/GaN LEDs. The optimal Ga doping concentration was found to be 3 at%. Even for 4” wafers, the TCO layer shows excellent homogeneity of film resistivity (0.8 %) according to Eddy current and spectroscopic ellipsometry mapping. This makes ALD a favourable technique over concurrent methods like MBE and PLD where the up-scaling is problematic. In agreement with previous studies, it was found that by an annealing treatment the quality of the GZO/p-GaN interface can be improved, although it causes the degradation of TCO conductivity. Therefore, a two-step ALD deposition technique was proposed and demonstrated: a “buffer layer” deposited and annealed first was followed by a second deposition step to maintain the high conductivity of the top layer.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Annealing (metallurgy)
Doping
General Physics and Astronomy
02 engineering and technology
Surfaces and Interfaces
General Chemistry
Conductivity
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Surfaces, Coatings and Films
law.invention
Atomic layer deposition
Electrical resistivity and conductivity
law
0103 physical sciences
Optoelectronics
Wafer
0210 nano-technology
business
Electrical conductor
Light-emitting diode
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 379
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........9d677e8ccaab18f57a1ad88666f81bae
- Full Text :
- https://doi.org/10.1016/j.apsusc.2016.04.081