Back to Search
Start Over
Recent advances in defect-selective etching of GaN
- Source :
- Journal of Crystal Growth. 210:151-156
- Publication Year :
- 2000
- Publisher :
- Elsevier BV, 2000.
-
Abstract
- In this communication two defect-selective etching methods for GaN are evaluated and critically compared: (i) orthodox etching in molten bases (KOH}NaOH eutectic denoted E) and in hot H 2 SO 4 /H 3 PO 4 acids (denoted HH etching) and (ii) photoelectrochemical (PEC) etching in aqueous KOH solutions. The parameters of etching are given for di!erent type of materials, i.e. bulk crystals and epitaxial layers, for both Ga- and N-polar M 0001 Nsurfaces. It is shown that molten bases are e!ective in revealing nano-pipes, inversion domains (IDs) and some dislocations, but the optimal etching parameters depend on the type of material, type and density of defects and polarity. Both orthodox etchants that result in the formation of pits on dislocations are also suitable for revealing micro-defects in heavily Mg-doped GaN single crystals but instead of pits, protruding etch features are formed. The reliability and limitations of these etching methods in revealing defects are demonstrated by means of transmission electron microscopy (TEM) calibration and by the selective formation of etch pits on dislocations introduced by indentation. Comparison with PEC etching, newly developed for GaN, is brie#y discussed. ( 2000 Published by Elsevier Science B.V. All rights reserved. PACS: 61.72.Ff
- Subjects :
- Aqueous solution
Materials science
business.industry
Mineralogy
Gallium nitride
Condensed Matter Physics
Epitaxy
Isotropic etching
Inorganic Chemistry
chemistry.chemical_compound
chemistry
Etching (microfabrication)
Transmission electron microscopy
Indentation
Materials Chemistry
Optoelectronics
business
Eutectic system
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 210
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........9d328736d1974789eaf5b453a35d0ea8