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Voltage fluctuations in mesoscopic structures of bismuth

Authors :
R.S. Zheng
Yueh-Ling Liu
K. Gamo
Sadao Takaoka
Susumu Namba
Kenya Murase
Source :
Solid State Communications. 73:677-680
Publication Year :
1990
Publisher :
Elsevier BV, 1990.

Abstract

The resistance fluctuations with magnetic field in mesoscopic wires of bismuth have been investigated. The wires show conductance fluctuations (dG) and antilocalization effects, and show voltage fluctuations in Hall measurements at 4.2K and 1.5K. It is found that in the strong spin-orbit coupling case, the dG are reduced by 1 ∼ 2 order, and when the length of wire (L) shorter than the coherence length (Li), the voltage fluctuations are constant, and the conductance fluctuations are not universal and will diverge as dG=(e2/h)LiLt/L2 when the thermal length (Lt) is also shorter than Li.

Details

ISSN :
00381098
Volume :
73
Database :
OpenAIRE
Journal :
Solid State Communications
Accession number :
edsair.doi...........9d282424ddd96bd48391a599ebf9458b
Full Text :
https://doi.org/10.1016/0038-1098(90)90553-n