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Voltage fluctuations in mesoscopic structures of bismuth
- Source :
- Solid State Communications. 73:677-680
- Publication Year :
- 1990
- Publisher :
- Elsevier BV, 1990.
-
Abstract
- The resistance fluctuations with magnetic field in mesoscopic wires of bismuth have been investigated. The wires show conductance fluctuations (dG) and antilocalization effects, and show voltage fluctuations in Hall measurements at 4.2K and 1.5K. It is found that in the strong spin-orbit coupling case, the dG are reduced by 1 ∼ 2 order, and when the length of wire (L) shorter than the coherence length (Li), the voltage fluctuations are constant, and the conductance fluctuations are not universal and will diverge as dG=(e2/h)LiLt/L2 when the thermal length (Lt) is also shorter than Li.
- Subjects :
- Mesoscopic physics
Condensed matter physics
Chemistry
Conductance
chemistry.chemical_element
General Chemistry
Spin–orbit interaction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Coherence length
Magnetic field
Bismuth
Electrical resistivity and conductivity
Hall effect
Materials Chemistry
Subjects
Details
- ISSN :
- 00381098
- Volume :
- 73
- Database :
- OpenAIRE
- Journal :
- Solid State Communications
- Accession number :
- edsair.doi...........9d282424ddd96bd48391a599ebf9458b
- Full Text :
- https://doi.org/10.1016/0038-1098(90)90553-n