The morphologies and characteristics of reactively formed TaSi2 films

Morphologies and characteristics of the surface and interface of TaSi2/Si and TaSi2/poly‐Si structures reactively formed by furnace annealing and rapid thermal annealing (RTA) have been investigated thoroughly. Scanning electron microscopy and transmission electron microscopy (cross section) results show that the morphologies of the annealed samples were uneven, but the surface and interface of RTA samples were better than that of furnace annealed samples. The specific contact resistivity of TaSi2 to n+ ‐Si substrates with Kelvin structure was measured. The contact resistivity increased as the annealing temperature increased, but was lower for RTA samples than for furnace annealed samples. Sheet resistance measurement, x‐ray diffraction, and Auger electron spectroscopy analysis techniques were used to monitor the formation of TaSi2 films.