Heated ion implantation technology for highly reliable metal-gate/high-k CMOS SOI FinFETs

The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and reliability has been thoroughly investigated. It was demonstrated that heated I/I brings perfect crystallization after annealing even in ultrathin Si channel. For the first time, it was found that heated I/I dramatically improves the characteristics such as Ion-Ioff, Vth variability, and bias temperature instability (BTI) for both nMOS and pMOS FinFETs in comparison with conventional room temperature I/I.