SiC quantum dot formation in SiO2 layer using double hot-Si+/C+-ion implantation technique

We experimentally studied the material structure and photoluminescence (PL) properties of SiC quantum-dots (QD) in SiO2 layer (Si+/C+–OX) fabricated by double hot-Si+/C+ ion implantation into SiO2 and the post N2 annealing, comparing with those of SiC-dots by single hot-C+ ion implanted oxide (C+–OX) and crystal-Si layers (C+–Si). X-ray photoemission spectroscopy for Si+/C+–OX confirmed Si–C bonds even in SiO2, which is the direct verification of SiC formation in SiO2. Moreover, transmission electron microscope analyzes showed that 2 nm diameter SiC-dots with a clear lattice spots were successfully formed in Si+/C+–OX. After N2 annealing, we demonstrated strong PL emission from Si+/C+–OX, and the PL intensity I PL of Si+/C+–OX is approximately 2.6 and 12 times larger than those of C+–Si and C+–OX, respectively. The stronger I PL of Si+/C+–OX is possibly attributable to QD-induced PL-efficiency enhancement in Si+/C+–OX. Moreover, PL photon energy at the peak I PL of Si+/C+–OX rapidly increases to approximately 2.4 eV after N2 annealing.