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Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing
- Source :
- Applied Surface Science. 257:8465-8468
- Publication Year :
- 2011
- Publisher :
- Elsevier BV, 2011.
-
Abstract
- a b s t r a c t Magnetic properties and microstructure of Cr-implanted Si have been investigated by alternating gradi- ent magnetometer (AGM), superconducting quantum interference device (SQUID) magnetometer, and transmission electron microscopy (TEM). p-Type (1 0 0) Si wafers were implanted at 200 keV at room temperature with a dosage of 1 × 10 16 cm −2
- Subjects :
- Materials science
Silicon
Condensed matter physics
Annealing (metallurgy)
Magnetometer
General Physics and Astronomy
chemistry.chemical_element
Surfaces and Interfaces
General Chemistry
Condensed Matter Physics
Microstructure
Magnetic hysteresis
Surfaces, Coatings and Films
law.invention
SQUID
Ion implantation
chemistry
Transmission electron microscopy
law
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 257
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........9cbe6ed0677f7ba163aaca8d02b06462
- Full Text :
- https://doi.org/10.1016/j.apsusc.2011.04.133