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Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing

Authors :
Congxiao Liu
Zhongpo Zhou
Liping Guo
Honglin Du
Jihong Chen
Wenyong Zhang
Zhiwei Ai
Shuang Yang
Source :
Applied Surface Science. 257:8465-8468
Publication Year :
2011
Publisher :
Elsevier BV, 2011.

Abstract

a b s t r a c t Magnetic properties and microstructure of Cr-implanted Si have been investigated by alternating gradi- ent magnetometer (AGM), superconducting quantum interference device (SQUID) magnetometer, and transmission electron microscopy (TEM). p-Type (1 0 0) Si wafers were implanted at 200 keV at room temperature with a dosage of 1 × 10 16 cm −2

Details

ISSN :
01694332
Volume :
257
Database :
OpenAIRE
Journal :
Applied Surface Science
Accession number :
edsair.doi...........9cbe6ed0677f7ba163aaca8d02b06462
Full Text :
https://doi.org/10.1016/j.apsusc.2011.04.133