Large, ultrafast induced index changes in ITO (Conference Presentation)

We present beam deflection measurements to study the nondegenerate nonlinear refraction of highly doped semiconductors at epsilon-near-zero (ENZ) for several different pump and probe polarizations. Beam deflection is sensitive to induced optical path length as small as 1/20,000 of a wavelength, which enables us to resolve NLR in the presence of large nonlinear absorption backgrounds. The optically induced index changes in these materials can be both very large (on the order of unity) and fast (on the order of 100 fs). Our results show that carrier redistribution effects dominate the nonlinear refraction, and by independently tuning the pump and probe wavelengths, we find that the strong wavelength dependence of nonlinearities around the ENZ point is different for pump and probe waves. These nonlinear optical properties, where the ultrafast index change can be larger than the linear index, offer new paradigms for dynamically switchable diffractive elements that respond to structured light, allowing manipulation of optical beams in transmission and reflection not only along the two spatial dimensions but also in time. This is a revolutionary change in the field of nonlinear optics allowing a myriad of potential applications, ranging from rapid all-optical beam steering and switching, to spectral scanning, spatial mode conversion, as well as pulse shaping and suppression, all on sub-picosecond time scales.