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Microscopic Structure of Directly Bonded Silicon Substrates

Microscopic Structure of Directly Bonded Silicon Substrates

Authors :
Eiji Toyoda
Osamu Sakata
Kato Tetsuji
Yuji Ohara
Jun Kikkawa
Takeshi Senda
Shigeru Kimura
Osamu Nakatsuka
Masaki Ogawa
Akira Sakai
Hiromichi Isogai
K. Izunome
Shigeaki Zaima
Yoshiaki Nakamura
Takaya Ueda
Hiroo Tajiri
Source :
Key Engineering Materials. 470:164-170
Publication Year :
2011
Publisher :
Trans Tech Publications, Ltd., 2011.

Abstract

Using X-ray microdiffraction (XRMD) and transmission electron microscopy (TEM) techniques, we have investigated the microscopic structure of Si(011)/Si(001) direct silicon bonding (DSB) substrates. XRMD was performed to measure the local lattice spacing and tilting in the samples before and after oxide out-diffusion annealing. Diffraction analyses for (022) lattice planes with two orthogonal in-plane directions of X-ray incidence revealed anisotropic domain textures in the Si(011) layer. Such anisotropy was also confirmed by TEM in the morphology at the Si(011)/Si(001) bonded interface. The anisotropic crystallinity is discussed on the basis of interfacial defect structures which are proper to the DSB substrate.

Details

ISSN :
16629795
Volume :
470
Database :
OpenAIRE
Journal :
Key Engineering Materials
Accession number :
edsair.doi...........9c1191d801ace77f32b5407e4a9827a5
Full Text :
https://doi.org/10.4028/www.scientific.net/kem.470.164