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Electrically stable low voltage ZnO transistors with organic/inorganic nanohybrid dielectrics
- Source :
- Applied Physics Letters. 92:023506
- Publication Year :
- 2008
- Publisher :
- AIP Publishing, 2008.
-
Abstract
- We report on the fabrication of top-gate ZnO thin-film transistors (TFTs) with organic and inorganic nanohybrid dielectric layers that take superlattice form in their inside structure. The nanohybrid dielectrics were prepared by the alternate deposition of organic self-assembled monolayer and oxide monolayer on sputter-deposited ZnO channel. With a 22-nm-thin AlOx-based hybrid dielectric layer (∼130nFcm2), our ZnO TFT showed a field mobility of 0.36cm2Vs operating at 8V, while the mobility increased up to 0.66cm2Vs with a 22-nm-thin AlOx-based/TiOx-based/AlOx-based (5.5nm11nm5.5nm and ∼220nFcm2) triple hybrid layer under 2V operation. Since both ZnO-TFTs display little gate hysteresis, we conclude that our nanohybrid dielectric approach is promising to achieve a gate-stable low voltage top-gate ZnO-TFTs.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 92
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........9bbdee977f09a36132df7b5e1aceaf58
- Full Text :
- https://doi.org/10.1063/1.2827588