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Electrically stable low voltage ZnO transistors with organic/inorganic nanohybrid dielectrics

Authors :
Seongil Im
Byoung Hun Lee
Min Suk Oh
Kwang H. Lee
Myung Mo Sung
Sung Hoon Cha
Source :
Applied Physics Letters. 92:023506
Publication Year :
2008
Publisher :
AIP Publishing, 2008.

Abstract

We report on the fabrication of top-gate ZnO thin-film transistors (TFTs) with organic and inorganic nanohybrid dielectric layers that take superlattice form in their inside structure. The nanohybrid dielectrics were prepared by the alternate deposition of organic self-assembled monolayer and oxide monolayer on sputter-deposited ZnO channel. With a 22-nm-thin AlOx-based hybrid dielectric layer (∼130nFcm2), our ZnO TFT showed a field mobility of 0.36cm2Vs operating at 8V, while the mobility increased up to 0.66cm2Vs with a 22-nm-thin AlOx-based/TiOx-based/AlOx-based (5.5nm11nm5.5nm and ∼220nFcm2) triple hybrid layer under 2V operation. Since both ZnO-TFTs display little gate hysteresis, we conclude that our nanohybrid dielectric approach is promising to achieve a gate-stable low voltage top-gate ZnO-TFTs.

Details

ISSN :
10773118 and 00036951
Volume :
92
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........9bbdee977f09a36132df7b5e1aceaf58
Full Text :
https://doi.org/10.1063/1.2827588