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High carrier mobility in low band gap polymer-based field-effect transistors
- Source :
- Applied Physics Letters. 87:252105
- Publication Year :
- 2005
- Publisher :
- AIP Publishing, 2005.
-
Abstract
- A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluo ...
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 87
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........9b88d2ade396555a40bac509a0b5af67
- Full Text :
- https://doi.org/10.1063/1.2142289