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Fabrication and Properties of a Gel-Cast Dense Silicon Carbide Body
- Source :
- Silicon. 14:2521-2532
- Publication Year :
- 2021
- Publisher :
- Springer Science and Business Media LLC, 2021.
-
Abstract
- In this research, the effect of different parameters on the behavior of suspension rheology, as well as the physical and mechanical properties of green and sintered SiC bodies, were investigated. Viscosity values for slurries containing 0.1, 0.3, 0.5, 0.7, 0.9 and 1.1 wt% of dispersant (Tetramethyl ammonium hydroxide ((CH3)4NOH, TMAH) were investigated, and the minimum viscosity was obtained for the slurry containing 0.7 wt% TMAH. The results showed that the highest amount of SiC powder that could be used without causing any serious problem was 37 vol.%. The monomers used in the research were metacrylamide (MAM) and N,Ń- methylenbisacrylamide (MBAM). Afterward, the effect of monomers content (MAM and MBAM) and ceramic load on the shrinkage and warpage of green bodies were investigated. The results demonstrated that increasing the amount of monomers decreases warpage rate (WP) and shrinkage rate (SK). Other than that, with increasing monomers ratio, both of these parameters increase uniformly. Subsequently, the samples were sintered for 1 h at 2150 °C. The results proved that the sample containing 37 vol.% of SiC with a monomers ratio of 3:1 and a total monomers content of 20 wt.% had the highest hardness, fracture toughness, and relative density, equal to 27.51 ± 1.25 GPa, 6.2 MPa.m1/2, and 96.89%, respectively.
- Subjects :
- 010302 applied physics
Materials science
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Dispersant
Electronic, Optical and Magnetic Materials
Viscosity
Ammonium hydroxide
chemistry.chemical_compound
Fracture toughness
chemistry
visual_art
0103 physical sciences
Slurry
visual_art.visual_art_medium
Relative density
Ceramic
Composite material
0210 nano-technology
Shrinkage
Subjects
Details
- ISSN :
- 18769918 and 1876990X
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- Silicon
- Accession number :
- edsair.doi...........9b6aba78a347daf0213abc5dbabf78e2
- Full Text :
- https://doi.org/10.1007/s12633-021-01022-6