Accurate prediction of device performance in sub-10nm WFIN FinFETs using scalpel SSRM-based calibration of process simulations

In this paper, we illustrate how high resolution two-dimensional (2D) carrier maps obtained from scalpel scanning spreading resistance microscopy (s-SSRM) can be applied to calibrate a technology computer aided design (TCAD) simulator in order to predict and understand the performance of sub-10nm WFIN FinFETs. In the proposed approach, process simulations are calibrated such that the resulting simulated carrier profiles match the quantified s-SSRM profiles. Upon reaching satisfactory agreement, they can be used as input for device simulators in order to predict more accurately key device parameters such as the linear on-state resistance (RON, LIN), and the threshold voltage (VT, SAT) roll-off to name few. This also allows us to accelerate the development of devices towards new technology nodes (as N7 and N5) by identifying parameters to be improved and technological options to be selected.