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Functionalization of a porous silicon impedance sensor

Authors :
Daniel John Blackwood
C.N. Liyanage
Source :
Thin Solid Films. 550:677-682
Publication Year :
2014
Publisher :
Elsevier BV, 2014.

Abstract

A sensor device is demonstrated based on changes in the impedance within a layer of porous silicon on exposure to the target analyte. Selectivity can be obtained by attaching functional organic groups onto the porous silicon. If the target molecules do not interact with the attached functional groups, then the sensor's response varies linearly with concentration. In the event however, when strong hydrogen-bonding occurs a much larger response is recorded on exposure to low concentrations than would be expected. The hydrogen-bonding either causes increased penetration of the solvent into the porous matrix or reduces the potential drop across the solvent/porous silicon interface, i.e. reduces magnitude of the space charge capacitance in the silicon nanorods.

Details

ISSN :
00406090
Volume :
550
Database :
OpenAIRE
Journal :
Thin Solid Films
Accession number :
edsair.doi...........9b55eaee2b9ae0f6c0805d77cfa89837
Full Text :
https://doi.org/10.1016/j.tsf.2013.11.003