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Functionalization of a porous silicon impedance sensor
- Source :
- Thin Solid Films. 550:677-682
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- A sensor device is demonstrated based on changes in the impedance within a layer of porous silicon on exposure to the target analyte. Selectivity can be obtained by attaching functional organic groups onto the porous silicon. If the target molecules do not interact with the attached functional groups, then the sensor's response varies linearly with concentration. In the event however, when strong hydrogen-bonding occurs a much larger response is recorded on exposure to low concentrations than would be expected. The hydrogen-bonding either causes increased penetration of the solvent into the porous matrix or reduces the potential drop across the solvent/porous silicon interface, i.e. reduces magnitude of the space charge capacitance in the silicon nanorods.
- Subjects :
- Materials science
Silicon
business.industry
technology, industry, and agriculture
Metals and Alloys
Analytical chemistry
chemistry.chemical_element
Surfaces and Interfaces
Penetration (firestop)
equipment and supplies
Porous silicon
Capacitance
Space charge
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry
Materials Chemistry
Optoelectronics
Surface modification
Nanorod
business
Porosity
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 550
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........9b55eaee2b9ae0f6c0805d77cfa89837
- Full Text :
- https://doi.org/10.1016/j.tsf.2013.11.003