Back to Search
Start Over
An in-plane GaAs single-electron memory cell operating at 77 K
- Source :
- Applied Physics Letters. 74:2073-2075
- Publication Year :
- 1999
- Publisher :
- AIP Publishing, 1999.
-
Abstract
- An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source–drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Silicon
business.industry
chemistry.chemical_element
Electrometer
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gallium arsenide
Threshold voltage
chemistry.chemical_compound
Single electron
chemistry
Memory cell
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Node (circuits)
Current (fluid)
business
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 74
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........9b47a6d47a8950283f5c6a341f7d0ab3