Cubic β-silicon carbide films on silicon substrates

Highly adherent films of cubic β-silicon carbide have been grown on single-crystal silicon substrates by heating in the presence of graphite in an argon atmosphere. The reaction process and film characteristics were investigated by electron diffraction. Initially, a single-crystal β-silicon carbide film is formed, having an epitaxial relationship to the silicon substrate. Growth proceeds by diffusion of a carbon-bearing species, from the gas phase, inward to the silicon-silicon carbide interface. Beyond a certain thickness, growth becomes polycrystalline. Both n - and p -type films resulted from spontaneous doping, but high resistivities were not observed.