Interface properties and in-plane linear photoluminescence polarization in highly excited type-II ZnSe/BeTe heterostructures with equivalent and nonequivalent interfaces

MLA

Lasse H Hansen, et al. “Interface Properties and In-Plane Linear Photoluminescence Polarization in Highly Excited Type-II ZnSe/BeTe Heterostructures with Equivalent and Nonequivalent Interfaces.” Journal of Applied Physics, vol. 91, Jan. 2002, pp. 652–57. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........9aba29db862604a2e090f44437ea5f4a&authtype=sso&custid=ns315887.

APA

Lasse H Hansen, Dmitri R. Yakovlev, G. Landwehr, Andreas Waag, S. V. Zaitsev, W. Ossau, V. D. Kulakovskii, I. I. Tartakovskii, & A. A. Maksimov. (2002). Interface properties and in-plane linear photoluminescence polarization in highly excited type-II ZnSe/BeTe heterostructures with equivalent and nonequivalent interfaces. Journal of Applied Physics, 91, 652–657.

Chicago

Lasse H Hansen, Dmitri R. Yakovlev, G. Landwehr, Andreas Waag, S. V. Zaitsev, W. Ossau, V. D. Kulakovskii, I. I. Tartakovskii, and A. A. Maksimov. 2002. “Interface Properties and In-Plane Linear Photoluminescence Polarization in Highly Excited Type-II ZnSe/BeTe Heterostructures with Equivalent and Nonequivalent Interfaces.” Journal of Applied Physics 91 (January): 652–57. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........9aba29db862604a2e090f44437ea5f4a&authtype=sso&custid=ns315887.