Back to Search
Start Over
Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon
- Source :
- Journal of Applied Physics. 128:105701
- Publication Year :
- 2020
- Publisher :
- AIP Publishing, 2020.
-
Abstract
- The effect of fluorine (F) on diffusion of boron (B) in silicon (Si) is investigated by secondary ion mass spectrometry of Si, B, and F diffusion using pre-amorphized natSi/28Si isotope multilayers that are co-implanted with B and F. By the presence of F, diffusion of B is suppressed while that of Si is enhanced. A quantitative analysis of the experimental results based on our diffusion model shows that the suppression of B diffusion is due to (1) Si interstitial undersaturation caused by the time-dependent formation and dissolution of F-vacancy (FV) clusters and (2) direct interaction between B and FV clusters. The model developed in this study enables an accurate simulation of B and Si diffusion in the presence of F in Si.
- Subjects :
- 010302 applied physics
Materials science
Silicon
Isotope
Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Secondary ion mass spectrometry
chemistry
0103 physical sciences
Fluorine
Diffusion (business)
0210 nano-technology
Boron
Quantitative analysis (chemistry)
Dissolution
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 128
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........9aae69bbea5f5820d0cee0a2b452f227