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Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology
Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology
- Source :
- Japanese Journal of Applied Physics. 52:04CA02
- Publication Year :
- 2013
- Publisher :
- IOP Publishing, 2013.
-
Abstract
- This work reports on aggressively scaled replacement metal gate, high-k last devices (RMG-HKL), exploring several options for effective work function (EWF) engineering, and targeting logic high-performance and low-power applications. Tight low-threshold voltage (V T) distributions for scaled NMOS devices are obtained by controlled TiN/TiAl-alloying, either by using RF-physical vapor deposition (RF-PVD) or atomic layer deposition (ALD) for TiN growth. The first technique allows optimization of the TiAl/TiN thicknesses at the bottom of gate trenches while maximizing the space to be filled with a low-resistance metal; using ALD minimizes the occurrence of preferential paths, at gate sidewalls, for Al diffusion into the high-k dielectric, reducing gate leakage (J G). For multi-gate fin field-effect transistors (FinFETs) which require smaller EWF shifts from mid-gap for low-V T: 1) conformal, lower-J G ALD-TiN/TaSiAl; and 2) Al-rich ALD-TiN by controlled Al diffusion from the fill-metal are demonstrated to be promising candidates. Comparable bias temperature instability (BTI), improved noise behavior, and slightly reduced equivalent oxide thickness (EOT) are measured on Al-rich EWF-metal stacks.
- Subjects :
- Materials science
business.industry
Transistor
General Engineering
General Physics and Astronomy
chemistry.chemical_element
Nanotechnology
Equivalent oxide thickness
law.invention
Atomic layer deposition
chemistry
law
Optoelectronics
business
Tin
Metal gate
NMOS logic
Leakage (electronics)
High-κ dielectric
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 52
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........9a5f2be302572414135787354e4b5a9f
- Full Text :
- https://doi.org/10.7567/jjap.52.04ca02