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Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology

Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology

Authors :
Anabela Veloso
Atif Noori
Wei Tang
Naoto Horiguchi
Xinyu Fu
Hilde Tielens
Nancy Heylen
Harold Dekkers
Seshadri Ganguli
Eddy Simoen
Anup Phatak
Katia Devriendt
Thomas Witters
Aaron Thean
J. Geypen
Annemie Van Ammel
Yu Lei
Soon Aik Chew
Srinivas Gandikota
Naomi Yoshida
Lars-Ake Ragnarsson
Tom Schram
Xinliang Lu
Paola Favia
Stephan Brus
Hugo Bender
Michael S. Chen
Farid Sebaai
Adam Brand
Higuchi Yuichi
Source :
Japanese Journal of Applied Physics. 52:04CA02
Publication Year :
2013
Publisher :
IOP Publishing, 2013.

Abstract

This work reports on aggressively scaled replacement metal gate, high-k last devices (RMG-HKL), exploring several options for effective work function (EWF) engineering, and targeting logic high-performance and low-power applications. Tight low-threshold voltage (V T) distributions for scaled NMOS devices are obtained by controlled TiN/TiAl-alloying, either by using RF-physical vapor deposition (RF-PVD) or atomic layer deposition (ALD) for TiN growth. The first technique allows optimization of the TiAl/TiN thicknesses at the bottom of gate trenches while maximizing the space to be filled with a low-resistance metal; using ALD minimizes the occurrence of preferential paths, at gate sidewalls, for Al diffusion into the high-k dielectric, reducing gate leakage (J G). For multi-gate fin field-effect transistors (FinFETs) which require smaller EWF shifts from mid-gap for low-V T: 1) conformal, lower-J G ALD-TiN/TaSiAl; and 2) Al-rich ALD-TiN by controlled Al diffusion from the fill-metal are demonstrated to be promising candidates. Comparable bias temperature instability (BTI), improved noise behavior, and slightly reduced equivalent oxide thickness (EOT) are measured on Al-rich EWF-metal stacks.

Details

ISSN :
13474065 and 00214922
Volume :
52
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........9a5f2be302572414135787354e4b5a9f
Full Text :
https://doi.org/10.7567/jjap.52.04ca02