Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures

In this work, the Ni/AlO x /Pt RRAM device was fabricated with solution-processed AlO x thin film at different annealing temperatures (150/200/250/300/350°C). The supreme electrical performance and stable operation of device has been achieved demonstrating resistive switching characteristics at 250°C, including SET operation voltage lower than 1.5 V, narrowest resistance distribution, retention time longer than 104 s and endurance over 102 cycles. The results reveal the effect of dielectric fabrication temperatures for RRAM device and demonstrate the prospect of solution-processed methodology.