Relative lattice parameter measurement of submicron quaternary (InGaAsP) device structures grown on InP substrates

MLA

A.K. Chin, et al. “Relative Lattice Parameter Measurement of Submicron Quaternary (InGaAsP) Device Structures Grown on InP Substrates.” Journal of Applied Physics, vol. 62, Oct. 1987, pp. 3156–60. EBSCOhost, https://doi.org/10.1063/1.339371.

APA

A.K. Chin, M. E. Twigg, S. N. G. Chu, A. T. Macrander, David C. Joy, & D.M. Maher. (1987). Relative lattice parameter measurement of submicron quaternary (InGaAsP) device structures grown on InP substrates. Journal of Applied Physics, 62, 3156–3160. https://doi.org/10.1063/1.339371

Chicago

A.K. Chin, M. E. Twigg, S. N. G. Chu, A. T. Macrander, David C. Joy, and D.M. Maher. 1987. “Relative Lattice Parameter Measurement of Submicron Quaternary (InGaAsP) Device Structures Grown on InP Substrates.” Journal of Applied Physics 62 (October): 3156–60. doi:10.1063/1.339371.