Dielectric interface effects in subsurface microscopy of integrated circuits

We investigate the defocus and image quality affected by a dielectric interface on high numerical aperture focusing of linearly polarized illumination in aplanatic mode. Theoretical and experimental demonstration is performed on subsurface backside microscopy of silicon integrated circuits, showing that the high longitudinal magnification provided by solid immersion lens microscopy allows the observation of significant astigmatism. It is shown that a 50 micron longitudinal displacement of the objective lens with respect to the sample is necessary to achieve maximum resolutions in two directions.