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Physical characteristics of NaTaO3Under pressure for electronic devices

Authors :
Abeer S. Altowyan
Javed Iqbal
Mehwish Khalid Butt
Muhammad Yaseen
Adil Murtaza
Shanza Mubashir
Amel Laref
Munawar Iqbal
Sadia Riaz
A. Dahshan
Source :
Materials Science in Semiconductor Processing. 133:105976
Publication Year :
2021
Publisher :
Elsevier BV, 2021.

Abstract

In the present work, the optical, electronic and thermoelectric (TE) characteristics of NaTaO3 are investigated with implementation of pressure ranging 0 to 140 GPa.The calculations were done in the framework of density functional theory (DFT) within Perdew-Burke-Ernzerhof generalized gradient approximation (PBE-GGA) scheme implemented within WIEN2K package. The semiconducting Eg behavior of NaTaO3compound has been revealed at all applied pressures. Results indicated that the value of Eg increments from 2.29 eV (0 GPa) to 2.82 eV (140 GPa), however, the characteristics of Eg transformed to direct from indirect with the increment in pressure. The optical characteristics are also explored in the form of dielectric constants, reflectivity (R (ω)) and absorption coefficient (α (ω)). Moreover, the TE characteristics are also investigated. TE and optical features disclosed that NaTaO3 is a good candidate for optical and TE devices.

Details

ISSN :
13698001
Volume :
133
Database :
OpenAIRE
Journal :
Materials Science in Semiconductor Processing
Accession number :
edsair.doi...........99d3fde97d742a6cbde503c1f2fc20c8
Full Text :
https://doi.org/10.1016/j.mssp.2021.105976