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Physical characteristics of NaTaO3Under pressure for electronic devices
- Source :
- Materials Science in Semiconductor Processing. 133:105976
- Publication Year :
- 2021
- Publisher :
- Elsevier BV, 2021.
-
Abstract
- In the present work, the optical, electronic and thermoelectric (TE) characteristics of NaTaO3 are investigated with implementation of pressure ranging 0 to 140 GPa.The calculations were done in the framework of density functional theory (DFT) within Perdew-Burke-Ernzerhof generalized gradient approximation (PBE-GGA) scheme implemented within WIEN2K package. The semiconducting Eg behavior of NaTaO3compound has been revealed at all applied pressures. Results indicated that the value of Eg increments from 2.29 eV (0 GPa) to 2.82 eV (140 GPa), however, the characteristics of Eg transformed to direct from indirect with the increment in pressure. The optical characteristics are also explored in the form of dielectric constants, reflectivity (R (ω)) and absorption coefficient (α (ω)). Moreover, the TE characteristics are also investigated. TE and optical features disclosed that NaTaO3 is a good candidate for optical and TE devices.
- Subjects :
- 010302 applied physics
Work (thermodynamics)
Materials science
Condensed matter physics
Mechanical Engineering
02 engineering and technology
Dielectric
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Reflectivity
WIEN2k
Mechanics of Materials
Attenuation coefficient
0103 physical sciences
Thermoelectric effect
General Materials Science
Density functional theory
Electronics
0210 nano-technology
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 133
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........99d3fde97d742a6cbde503c1f2fc20c8
- Full Text :
- https://doi.org/10.1016/j.mssp.2021.105976