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Identifying Native Point Defects in the Topological Insulator Bi2Te3
- Source :
- ACS Nano. 14:13172-13179
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- We successfully identified native point defects that occur in Bi2Te3 crystals by combining high-resolution bias-dependent scanning tunneling microscopy and density functional theory based calculations. As-grown Bi2Te3 crystals contain vacancies, antisites, and interstitial defects that may result in bulk conductivity and therefore may change the insulating bulk character. Here, we demonstrate the interplay between the growth conditions and the density of different types of native near-surface defects. In particular, scanning tunneling spectroscopy reveals the dependence on not only the local atomic environment but also on the growth kinetics and the resulting sample doping from n-type toward intrinsic crystals with the Fermi level positioned inside the energy gap. Our results establish a bias-dependent STM signature of the Bi2Te3 native defects and shed light on the link between the native defects and the electronic properties of Bi2Te3, which is relevant for the synthesis of topological insulator materials and the related functional properties.
- Subjects :
- Materials science
Condensed matter physics
Band gap
Doping
Scanning tunneling spectroscopy
Fermi level
General Engineering
General Physics and Astronomy
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Crystallographic defect
0104 chemical sciences
law.invention
Condensed Matter::Materials Science
symbols.namesake
law
Topological insulator
symbols
General Materials Science
Density functional theory
Scanning tunneling microscope
0210 nano-technology
Subjects
Details
- ISSN :
- 1936086X and 19360851
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- ACS Nano
- Accession number :
- edsair.doi...........99cc58e9e2c562d55f12844d719dd4be