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Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC
- Source :
- Applied Physics Letters. 77:2418-2420
- Publication Year :
- 2000
- Publisher :
- AIP Publishing, 2000.
-
Abstract
- The controlled growth of SiC heteropolytypic structures consisting of hexagonal and cubic polytypes has been performed by solid-source molecular-beam epitaxy. On on-axis substrates, 4H/3C/4H–SiC(0001) and 6H/3C/6H–SiC(0001) structures were obtained by first growing the 3C–SiC layer some nanometer thick at lower substrate temperatures (T=1550 K) and Si-rich conditions and a subsequent growth of α-SiC on top of the 3C–SiC layer at higher T (1600 K) under more C-rich conditions. On off-axis substrates, multiheterostructures consisting of 4H/3C- or 6H/3C-stacking sequences were also obtained by first nucleating selectively one-dimensional wire-like 3C–SiC on the terraces of well-prepared off-axis α-SiC(0001) substrates at low T(
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 77
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........996728fb134c1b0c658a7941a0034863