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Impact of valence fluctuations on the electronic properties of RO1−xFxBiS2 ( R=Ce and Pr)
- Source :
- Physical Review B. 98
- Publication Year :
- 2018
- Publisher :
- American Physical Society (APS), 2018.
-
Abstract
- We have investigated the electronic properties of ${\mathrm{BiS}}_{2}$-based superconductors by using x-ray photoemission spectroscopy (XPS). In going from $x=0.3$ to 0.5 in ${\mathrm{PrO}}_{1\ensuremath{-}x}{\mathrm{F}}_{x}{\mathrm{BiS}}_{2}$, the Pr $3d$ and Pr $4d$ peaks are shifted by $\ensuremath{\sim}0.10\ifmmode\pm\else\textpm\fi{}0.05$ eV from the Fermi level, partially consistent with the electron doping. In ${\mathrm{PrO}}_{1\ensuremath{-}x}{\mathrm{F}}_{x}{\mathrm{BiS}}_{2}$, the ${\mathrm{Pr}}^{3+}\ensuremath{-}{\mathrm{Pr}}^{4+}$ mixed valence remains unchanged with the electron doping from $x=0.3$ to 0.5. In ${\mathrm{CeO}}_{1\ensuremath{-}x}{\mathrm{F}}_{x}{\mathrm{BiS}}_{2}$, the doped electrons for $x=0.5$ almost suppress the ${\mathrm{Ce}}^{3+}\ensuremath{-}{\mathrm{Ce}}^{4+}$ valence fluctuation. Although the core-level peaks are also shifted by $\ensuremath{\sim}0.10\ifmmode\pm\else\textpm\fi{}0.05$ eV towards the higher-binding-energy side with the electron doping from $x=0$ to 0.5 in ${\mathrm{CeO}}_{1\ensuremath{-}x}{\mathrm{F}}_{x}{\mathrm{BiS}}_{2}$, the Bi $4{f}_{7/2}$ binding-energy shift is higher in the Pr system compared with the Ce system. The present results suggest that the doped electrons increase orbital occupations in the rare-earth $4f$ orbitals at the valence band and show valence fluctuations differently in the two systems.
- Subjects :
- Physics
Superconductivity
Valence (chemistry)
Photoemission spectroscopy
Fermi level
Doping
02 engineering and technology
Electron
021001 nanoscience & nanotechnology
01 natural sciences
symbols.namesake
Crystallography
Atomic orbital
X-ray photoelectron spectroscopy
0103 physical sciences
symbols
Condensed Matter::Strongly Correlated Electrons
010306 general physics
0210 nano-technology
Subjects
Details
- ISSN :
- 24699969 and 24699950
- Volume :
- 98
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi...........9943ed1056f21c32b4405fa187e57acd