Single-hole dispersion relation for the real CuO2plane

Dispersion relation for the Cu${\mathrm{O}}_{2}$ hole is calculated based on the generalized $t\ensuremath{-}{t}^{\ensuremath{'}}\ensuremath{-}J$ model, recently derived from the three-band one. Numerical ranges for all model parameters, $\frac{t}{J}=2.4\ensuremath{-}2.7$, $\frac{{t}^{\ensuremath{'}}}{t}=0.0 \mathrm{to} \ensuremath{-}0.25$, $\frac{{t}^{\ensuremath{'}\ensuremath{'}}}{t}=0.1\ensuremath{-}0.15$, and three-site terms $2{t}_{N}\ensuremath{\sim}{t}_{S}\ensuremath{\sim}\frac{J}{4}$ have been strongly justified previously. Physical reasons for their values are also discussed. A self-consistent Born approximation is used for the calculation of the hole dispersion. Good agreement between calculated ${E}_{\mathrm{k}}$ and one obtained from the angle-resolved photoemission experiments is found. A possible explanation of the broad peaks in the experimental energy distribution curves at the top of the hole band is presented.