Metalorganic Chemical Vapor Deposition of Semiconducting III/VI In2Se3 Thin Films from the Single-Source Precursor: In[SeC(SiMe3)3]3

Thin films of In{sub 2}Se{sub 3} have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In[SeC(SiMe{sub 3}){sub 3}]{sub 3} as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In{sub 2}Se{sub 3} films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS). 36 refs., 4 figs., 2 tabs.