GaN epitaxial growth on neodium gallate substrates

We have investigated the feasibility of neodium gallate (NdGaO3, NGO) as substrates for GaN epitaxial growth for the first time. GaN films deposited on neodium gallate substrates by the hydride vapor phase epitaxy technique have been found to be single-crystalline with the epitaxial relationship of GaN(0001)|NGO(011) and GaN[1010]|NGO[100], where the lattice mismatch between the film and the substrate is less than 2%. Photoluminescence (PL) of GaNNGO films at room temperature showed a strong band edge emission with little emission in the longer wavelength region. The carrier concentration and the electronmobility of GaNNGO films were 7 × 1019 cm−3 and 45 cm2/Vs, respectively. These results are superior to those of GaN/sapphire films deposited simultaneously under the same conditions.