Effects of design parameters on non-biased optical bistable devices using multiple quantum well nipi-diode structure

We have studied the effect of design parameters on the performance of non-biased optical bistable (NOB) devices fabricated with non-resonant multiple quantum wells nipi-diode structures. This device made of extremely shallow quantum wells as intrinsic regions allows both a large low-field electroabsorption change and exciton ionization, and consequently, ensures both large electric field swing and strong light absorption without external bias voltage. By optimizing stack pairs of non-resonant nipi-structures, the performance of the NOB device was significantly enhanced with a large signal contrast ratio, low heat power dissipation, and low drive voltage, while maintaining low switching energy, high signal difference, and layout simplification.