Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

Authors :: J.H. Oh
J.H. Park
Y.S. Lim
H.S. Lim
Y.T. Oh
J.S. Kim
J.M. Shin
Y.J. Song
K.C. Ryoo
D.W. Lim
S.S. Park
J.I. Kim
J.H. Kim
J. Yu
F. Yeung
C.W. Jeong
J.H. Kong
D.H. Kang
G.H. Koh
G.T. Jeong
H.S. Jeong
Kinam Kim
Source :: 2006 International Electron Devices Meeting.
Publication Year :: 2006
Publisher :: IEEE, 2006.
Abstract: Fully functional 512Mb PRAM with 0.047mum2 (5.8F2) cell size was successfully fabricated using 90nm diode technology in which the authors developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge2Sb2Te5. The 512Mb PRAM showed excellent electrical properties of sufficiently large on-current and stable phase transition behavior. The reliability of the 512Mb chip was also evaluated as a write-endurance over 1E5 cycles and a data retention time over 10 years at 85degC