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Vertical illumination InAlAs avalanche photodiode for 50-Gbit/s applications

Authors :
Yoshifumi Muramoto
Hideaki Matsuzaki
Haruki Yokoyama
Masahiro Nada
Tadao Ishibashi
Source :
26th International Conference on Indium Phosphide and Related Materials (IPRM).
Publication Year :
2014
Publisher :
IEEE, 2014.

Abstract

We achieved a high-performance InAlAs avalanche photodiode (APD) for beyond 25-Gbit/s applications, such as 50-Gbit/s. The large optical tolerance of the APD's vertical-illumination structure makes optical coupling easy compared with waveguide-type structures. The fabricated APD exhibits responsivity of 0.69 A/W with a large 3-dB bandwidth of 30 GHz at a multiplication factor (M) of 4.6, which enables 50-Gbit/s highly sensitive operation.

Details

Database :
OpenAIRE
Journal :
26th International Conference on Indium Phosphide and Related Materials (IPRM)
Accession number :
edsair.doi...........97d83cc2d2bb35f88ca74bf03596c284