Optical and Compositional Properties of ALD Grown TiOx

35th European Photovoltaic Solar Energy Conference and Exhibition; 188-191
TiOx is an n-type semiconductor with a high dielectric constant, that has been frequently employed in photovoltaic solar cell applications. Thin films of TiOx have been recently demonstrated to act as an efficient electron selective and passivation layers for n-type crystalline silicon (c-Si) solar cells. In this study, optical and compositional characterizations of TiOx thin films deposited by thermal atomic layer (ALD) using tetrakis(dimethylamido)titanium (TDMAT) and H2O as precursors on n-type c-Si substrates, were investigated by using spectroscopic ellipsometry (SE) and x-ray photoelectron spectroscopy (XPS) techniques. Effects of substrate and precursor temperature as well as postdeposition annealing on the optical and compositional properties of ALD-grown TiOx thin films were investigated.