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High-Temperature Nucleation of GaP on V-Grooved Si
- Source :
- Crystal Growth & Design. 20:6745-6751
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- The use of nanopatterned {111}-faceted v-grooves has recently shown promise for growing high-quality III–V material on Si. Here, we study the effect of reactor conditions and surface pretreatments ...
Details
- ISSN :
- 15287505 and 15287483
- Volume :
- 20
- Database :
- OpenAIRE
- Journal :
- Crystal Growth & Design
- Accession number :
- edsair.doi...........97b5cf340b1c62be6fb8ad6dc6d1f7a4
- Full Text :
- https://doi.org/10.1021/acs.cgd.0c00875