Determination of zinc concentration in GaN:Zn,Si from photoluminescence

Gallium nitride samples codoped with zinc and silicon were fabricated by metal organic chemical vapor deposition. Optical properties of these samples with lowlevel doped acceptor are investigated by temperature dependent photoluminescence (PL) measurements. PL spectrum shows three peaks labeled as near band edge (NBE), blue luminescence (BL), and yellow luminescence (YL). BL originates from ZnGa acceptors in GaN:Zn,Si. It is quenched above 250 K for all samples measured at excitation density of Pexc = 0.2 Wcm−2. The concentration of acceptors responsible for the BL band is estimated for relatively low Zn concentrations by comparing integrated PL intensity of NBE and Zn-related BL bands at 200 K (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)