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Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress

Authors :
Huey-Liang Hwang
Chun-Heng Chen
Fu-Chien Chiu
Ming-Han Liao
Source :
Journal of Applied Physics. 107:034503
Publication Year :
2010
Publisher :
AIP Publishing, 2010.

Abstract

Transmission line pulse measurements were used to investigate the reliability of the HfO2 dielectric under an electrostatic discharge event. Time-dependent dielectric breakdown of the gate oxide was characterized down to the microsecond time regime. The positive oxide-trapped charges Qot+ were observed beyond a certain electric field and the corresponding centroid evolution was examined. In the high-field stress regime, the field acceleration parameter of the HfO2 dielectric is smaller than that of the silicon oxynitride. We also demonstrated this phenomenon can be attributed to the stronger phonon-assisted tunneling process in the high-k dielectrics.

Details

ISSN :
10897550 and 00218979
Volume :
107
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........9732b111b4043db207df815a1402aaae
Full Text :
https://doi.org/10.1063/1.3290973