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2D Poisson-Schrodinger simulations in ultra-thin silicon-on-nothing devices: quantum effects impact evaluation
- Source :
- 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).
- Publication Year :
- 2005
- Publisher :
- IEEE, 2005.
-
Abstract
- We present results of simulations on silicon-on-nothing (SON) devices featuring ultra-thin Si channels. The simulations are based on QUANTIX, a 2D-Finite Element solver, and consequently fully account for quantization effects. Quantum simulations demonstrate the impact of carriers confinement in very thin Si conduction channel, therefore leading on a substantial threshold voltage increase, up to 350 mV from TSi=10 to 1 nm. Experimental data from SON devices featuring ultra-thin (
Details
- Database :
- OpenAIRE
- Journal :
- 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573)
- Accession number :
- edsair.doi...........97168af7bc370cd8c05dbd33263693cb
- Full Text :
- https://doi.org/10.1109/soi.2004.1391563